1310nm/1550nm Wavelength Division Multiplexer Manufacturers

We also supply merchandise sourcing and flight consolidation companies. We now have our very own manufacturing facility and sourcing business. We could present you with almost every kind of product relevant to our solution array for 1310nm/1550nm Wavelength Division Multiplexer, Only for accomplish the good-quality product to meet customer's demand, all of our products have been strictly inspected before shipment.
1310nm/1550nm Wavelength Division Multiplexer, Our company adheres to the spirit of "lower costs, higher quality, and making more benefits for our clients". Employing talents from the same line and adhering to the principle of "honesty, good faith, real thing and sincerity", our company hopes to gain common development with clients from both at home and abroad!

Hot Products

  • 50um InGaAs avalanche photodiodes APDs

    50um InGaAs avalanche photodiodes APDs

    50um InGaAs avalanche photodiodes APDs is the largest commercially available InGaAs APD with high responsivity and extremely fast rise and fall time throughout the 900 to 1700nm wavelength range, the peak responsivity at 1550nm is idealy suited to eys-safe rangefinding applications, free space optical communications, OTDR and Optical Coherence Tomography. The chip is hermetically sealed in a modified TO package, pigtailed option is also available.
  • 940nm 90W 106um Fiber Core Fiber Coupled Diode Laser

    940nm 90W 106um Fiber Core Fiber Coupled Diode Laser

    The 940nm 90W 106um Fiber Core Fiber Coupled Diode Laser offer up to 90W output power from a 106um fiber. The diode laser maintains its unparalleled reliability and efficiency by coupling high-brightness, high-power single-emitter diodes with a proprietary optical design for efficient fiber coupling.
  • Highly Doped Phosphorus Raman Fibers

    Highly Doped Phosphorus Raman Fibers

    Boxoptronics' Highly Doped Phosphorus Raman Fibers are designed for efficient Raman lasers and amplifiers operating in the 1.1-1.6 µm spectral range. The main advantage of phosphorous-doped fiber is the three times higher Raman shift value compared to germanium-doped fiber. This feature can greatly simplify the design of Raman fiber lasers and amplifiers.
  • 500um Large Area InGaAs Avalanche Photodiode Chip

    500um Large Area InGaAs Avalanche Photodiode Chip

    500um Large Area InGaAs Avalanche Photodiode Chip is specially designed to have a low dark, low capacitance and high avalanche gain. Using this chip an optical receiver with a high sensitivity can be achieved.
  • 1920~2020nm TDFA Thulium doped Fiber Amplifier

    1920~2020nm TDFA Thulium doped Fiber Amplifier

    1920~2020nm TDFA Thulium doped Fiber Amplifier can be used to amplify 2um band laser signals in the power range of -10dBm~+10dBm. The saturated output power can reach up to 40dBm. It is often used to increase the transmission power of laser light sources.
  • 780nm Femtosecond Pulse Fiber Laser For Multiphoton Imaging

    780nm Femtosecond Pulse Fiber Laser For Multiphoton Imaging

    780nm Femtosecond Pulse Fiber Laser For Multiphoton Imaging use the latest femtosecond laser technology to achieve stable output of 780nm femtosecond pulse laser. With the characteristics of narrow laser pulse and high peak power.

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