50um InGaAs Avalanche Photodiode Chip
  • 50um InGaAs Avalanche Photodiode Chip50um InGaAs Avalanche Photodiode Chip

50um InGaAs Avalanche Photodiode Chip

50um InGaAs Avalanche Photodiode Chip is photodiode with internal gain produced by the application of a reverse voltage. They have a higher signal-to-noise ratio (SNR) than photodiodes, as well as fast time response, low dark current, and high sensitivity. Spectral response range is typically within 900 - 1650nm.

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Product Description

1. Summary of 50um InGaAs Avalanche Photodiode Chip

50um InGaAs Avalanche Photodiode Chip is photodiode with internal gain produced by the application of a reverse voltage. They have a higher signal-to-noise ratio (SNR) than photodiodes, as well as fast time response, low dark current, and high sensitivity. Spectral response range is typically within 900 - 1650nm.

2. Introduction of 50um InGaAs Avalanche Photodiode Chip

50um InGaAs Avalanche Photodiode Chip is photodiode with internal gain produced by the application of a reverse voltage. They have a higher signal-to-noise ratio (SNR) than photodiodes, as well as fast time response, low dark current, and high sensitivity. Spectral response range is typically within 900 - 1650nm.

3. Features of 50um InGaAs Avalanche Photodiode Chip

Detect range 900nm-1650nm;

High speed;

High responsivity;

Low capacitance;

Low dark current;

Top illuminated planar structure.

4. Application of 50um InGaAs Avalanche Photodiode Chip

Monitoring;

Fiber-optic Instruments;

Data Communications.

5. Absolute Maximum Ratings of 50um InGaAs Avalanche Photodiode Chip

Parameter Symbol Value Unit
Maximum forward current - 10 mA
Maximum voltage Supply - VBR V
Operating temperature Topr -40 to +85
Storage temperature Tstg -55 to +125

6. Electro-Optical Characteristics(T=25℃) of 50um InGaAs Avalanche Photodiode Chip

Parameter Symbol Condition Min. Typ. Max. Unit
Wavelength range λ   900 - 1650 nm
Breakdown Voltage VBR Id =10uA 40 - 52 V
Temperature coefficient of VBR - - - 0.12 - V/℃
Responsivity R VR =VBR -3V 10 13 - A/W
Dark current ID VBR -3V - 0.4 10.0 nA
Capacitance C VR =38V, f=1MHz - 8 - pF
Bandwith Bw - - 2.0 - GHz

7. Dimension Parameter of 50um InGaAs Avalanche Photodiode Chip

Parameter Symbol Value Unit
Active area diameter D 53 um
Bond pad diameter - 65 um
Die size - 250x250 um
Die thickness t 150±20 um

8. Deliver,Shipping And Serving of 50um InGaAs Avalanche Photodiode Chip

All products have been tested before shipping out;

All products have 1-3 years warranty.(After the quality guarantee period began to charge appropriate maintenance service fee.)

We appreciate your business and offer an instant 7 days return policy. (7 days after receiving the items);

If the items you purchase from our store are not of perfected quality, that is they don‘t work electronically to manufacturers specifications, simply return them to us for replacement or refund;

If the items are defective, please notify us within 3 days of delivery;

Any items must be returned in their original condition to qualify for a refund or replacement;

The buyer is responsible for all the shipping cost incurred.

8. FAQ

Q: What is the active area would you like?

A: we have 50um 200um 500um active area InGaAs Avalanche Photodiode Chip.

Q: What is the requirement for the connector?

A: Box Optronics can customize according to your requirements.

Hot Tags: 50um InGaAs Avalanche Photodiode Chip, Manufacturers, Suppliers, Wholesale, Factory, Customized, Bulk, China, Made in China, Cheap, Low Price, Quality

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