200um InGaAs avalanche photodiodes APDs is the largest commercially available InGaAs APD with high responsivity and extremely fast rise and fall time throughout the 1100 to 1650nm wavelength range, the peak responsivity at 1550nm is idealy suited to eys-safe rangefinding applications, free space optical communications, OTDR and Optical Coherence Tomography. The chip is hermetically sealed in a modified TO package, pigtailed option is also available.
200um InGaAs avalanche photodiodes APDs is the largest commercially available InGaAs APD with high responsivity and extremely fast rise and fall time throughout the 1100 to 1650nm wavelength range, the peak responsivity at 1550nm is idealy suited to eys-safe rangefinding applications, free space optical communications, OTDR and Optical Coherence Tomography.
The chip is hermetically sealed in a modified TO package, pigtailed option is also available.
200um InGaAs avalanche photodiodes APDs is the largest commercially available InGaAs APD with high responsivity and extremely fast rise and fall time throughout the 1100 to 1650nm wavelength range, the peak responsivity at 1550nm is idealy suited to eys-safe rangefinding applications, free space optical communications, OTDR and Optical Coherence Tomography.
The chip is hermetically sealed in a modified TO package, pigtailed option is also available.
Detect range 1100nm-1650nm;
Wide dynamic range;
High responsibility;
Low dark current;
Standard TO-46 package.
Optical sensor;
free space optical communications.
Parameter | Symbol | Condition | Min. | Max. | Unit |
PD Reverse voltage | VR | CW | - | VBR | V |
Forward current | IF | CW | - | 10 | mA |
Reverse current | IR | CW | - | 10 | mA |
Operating temperature | TOP | Case temperature | -40 | +85 | ℃ |
Storage temperature | TSTG | Ambient temperature | -40 | +85 | ℃ |
Lead soldering temperture/Time | Ts | - | - | 260/10 | ℃/S |
Parameter | Symbol | Condition | Min. | Typ. | Max. | Unit |
Wavelength range | λ | 1100 | - | 1650 | nm | |
Active area | φ | - | - | 200 | - | um |
Responsibility | Re | M=1,λ=1550nm | 0.80 | - | - | A/W |
Multiplication factor | M | VR=VBR-3, λ=1550nm,φe=1uW | 10 | - | - | - |
Dark current | ID | VR=VBR-3, φe=0 | - | - | 35 | nA |
Reverse breakdown voltage | VBR | ID=10μA, φe=0 | 40 | - | 55 | V |
Bandwidth | BW | -3dB point, M=10, RL=50Ω | - | 1.25 | - | GHz |
Capacitance | C | M=10, φe=0, f=1MHz | - | - | 2 | pF |
All products have been tested before shipping out;
All products have 1-3 years warranty.(After the quality guarantee period began to charge appropriate maintenance service fee.)
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A: we have 0.3mm 0.5mm 1mm active area avalanche photodiodes.
Q: What is the requirement for the connector?A: Box Optronics can customize according to your requirements.
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