Photodiodes

Boxoptronics provide a wide selection of photodiodes (PD) with various active area sizes and packages. Discrete PIN junction photodiodes include indium gallium arsenide (InGaAs) and silicon (Si) materials. which are based on an N-on-P structure, are also available. The InGaAs photodiodes with high responsivity from 900 to 1700 nm and the silicon (Si) photodiode with high responsivity from 400 to 1100 nm.
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  • 500um TO CAN InGaAs avalanche photodiodes APDs is the largest commercially available InGaAs APD with high responsivity and extremely fast rise and fall time throughout the 1100 to 1650nm wavelength range, the peak responsivity at 1550nm is idealy suited to eys-safe rangefinding applications, free space optical communications, OTDR and Optical Coherence Tomography. The chip is hermetically sealed in a modified TO package, pigtailed option is also available.

Customized Photodiodes can be bought from Box Optronics. As one of the professional China Photodiodes manufacturers and suppliers, we assist customers to provide better product solutions and optimize industry costs. Photodiodes made in China is not only of high quality, but also cheap. You can wholesale our products at low prices. In addition, we also support bulk packaging. Our value is "customer first, service foremost, credibility foundation, win-win cooperation". For more info, welcome to visit our factory. Let us cooperate with each other to create a better future and mutual benefit.
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