Photodiodes

Boxoptronics provide a wide selection of photodiodes (PD) with various active area sizes and packages. Discrete PIN junction photodiodes include indium gallium arsenide (InGaAs) and silicon (Si) materials. which are based on an N-on-P structure, are also available. The InGaAs photodiodes with high responsivity from 900 to 1700 nm and the silicon (Si) photodiode with high responsivity from 400 to 1100 nm.
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  • The 1mm InGaAs/InP PIN Photodiode Chip offer superb response from 900nm to 1700nm, 1mm InGaAs/InP PIN Photodiode Chip is ideal for high bandwidth 1310nm and 1550nm optical networking applications. The device series offers high responsivity, low dark current and high bandwidth for high performance and low sensitivity receiver design. This device is ideal for manufacturers of optical receivers, transponders, optical transmission modules and combination PIN photo diode – transimpedance amplifier.

  • 50um InGaAs Avalanche Photodiode Chip is photodiode with internal gain produced by the application of a reverse voltage. They have a higher signal-to-noise ratio (SNR) than photodiodes, as well as fast time response, low dark current, and high sensitivity. Spectral response range is typically within 900 - 1650nm.

  • 200um InGaAs Avalanche Photodiode Chip is specially designed to have a low dark, low capacitance and high avalanche gain. Using this chip an optical receiver with a high sensitivity can be achieved.

  • 500um Large Area InGaAs Avalanche Photodiode Chip is specially designed to have a low dark, low capacitance and high avalanche gain. Using this chip an optical receiver with a high sensitivity can be achieved.

  • 50um InGaAs avalanche photodiodes APDs is the largest commercially available InGaAs APD with high responsivity and extremely fast rise and fall time throughout the 900 to 1700nm wavelength range, the peak responsivity at 1550nm is idealy suited to eys-safe rangefinding applications, free space optical communications, OTDR and Optical Coherence Tomography. The chip is hermetically sealed in a modified TO package, pigtailed option is also available.

  • 200um InGaAs avalanche photodiodes APDs is the largest commercially available InGaAs APD with high responsivity and extremely fast rise and fall time throughout the 1100 to 1650nm wavelength range, the peak responsivity at 1550nm is idealy suited to eys-safe rangefinding applications, free space optical communications, OTDR and Optical Coherence Tomography. The chip is hermetically sealed in a modified TO package, pigtailed option is also available.

Customized Photodiodes can be bought from Box Optronics. As one of the professional China Photodiodes manufacturers and suppliers, we assist customers to provide better product solutions and optimize industry costs. Photodiodes made in China is not only of high quality, but also cheap. You can wholesale our products at low prices. In addition, we also support bulk packaging. Our value is "customer first, service foremost, credibility foundation, win-win cooperation". For more info, welcome to visit our factory. Let us cooperate with each other to create a better future and mutual benefit.
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